Characterization of silicon surface implanted by nitrogen ion beam from plasma focus device

Abstract

Nitrogen ions were implanted into silicon surface using ion beam generated from plasma focus device (PF). This implantation was demonstrated experimentally. The amount of implanted nitrogen ions increased with depth of the implantation range. The analysis of chemical shifts of N 1s and Si 2p, using XPS (x-ray Photoelectron Spectroscopy), at different depths revealed changes in the chemical environments surrounding the implanted nitrogen ions as depth increased. Such depth profiling, based on XPS analysis, can be realized only in samples prepared under particular experimental conditions of PF. Three experimental conditions of PF (distance from anode, number of plasma shots and type of anode) were optimized to trace and study the chemical state of the implanted nitrogen. Adjusting these conditions can be helpful to both minimize the thickness of deposited layer from the anode material and to prevent induction of morphological changes above /or in/ the implanted surface. The study of surface deposits and morphology were realized by both PIXE (Particle Induced x-ray Emission) and EDX-SEM (Energy Dispersive x-ray with Secondary Electron Microscope), respectively.