Abstract
Characterization of silicon kerf from photovoltaic silicon-wafer production was carried out. Also, SiC powder was synthesized using high purity silicon kerf by varying grinding conditions. With increase of grinding time, surface of the silicon was oxidized to form silicon oxide. Also, it was observed that the unreacted silicon oxide and free silicon amount in the SiC powder increases with an increasing grinding times, even though silicon particle size of the starting material is decreased.
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