Abstract
Electrical properties for Si-implanted n-type GaN and AlGaN layers and contact resistances of ohmic contacts (Ti/Al) formed on these layers were examined. Experimental results clearly show that ohmic contacts on n-type GaN and n-type AlGaN with a low specific-contact resistance of under 10 −7 and 10 −6 Ω cm 2 can be fabricated on the high concentration n-type layers, which have been formed by Si ion implantation (30 keV: 1 × 10 14, 5 × 10 14, 1 × 10 15 and 2 × 10 15/cm 2) and subsequent annealing at 1250 °C for 2 min using a Si 3N 4 as a surface protection layer.
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