Abstract
Monoenergetic positrons were used as a nondestructive probe for SiO2 films deposited on Si substrates by atmospheric-pressure chemical vapor deposition using tetraethylortho-silicate (TEOS, Si(OC2H5)4) and O3. The formation of positronium (Ps) in the SiO2 films was found from measurements of Doppler broadening profiles of the annihilation radiation and lifetime spectra of positrons. A clear correlation between the formation probability of Ps and the concentration of H2O in the SiO2 films was established.
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