Abstract
Second-harmonic (SH) generation is a versatile method applicable to in-situ characterization of even non-centrosymmetric media like silicon carbide (SiC). In particular, the azimuthal rotational anisotropy of the SH response from SiC observed in reflection allows identification of various polytypes. The nonlinear-optical results are compared to X-ray diffraction data. The abundance of information obtained through the SH studies makes characteristic fingerprinting of the 6H, 15R, and 3C polytypes of SiC is possible. The spatial resolution of the optical sampling was about 50 μm in the lateral direction with a typical penetration depth of 100 nm for the fundamental radiation. Defect regions of different crystallographic structures in large SiC samples were identified by observing the spatially resolved dependence of the SH intensity.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Applied Physics A: Materials Science & Processing
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
