Abstract
Interface properties of 4H-SiC N-MOS and P-MOS capacitors with two different NO annealing conditions are characterized by the conductance method. With the enhancement of nitrogen passivation, the density of interface states is reduced as expected. Fast interface states (response frequencies >1 MHz) are observed for both N-MOS and P-MOS capacitors with weak NO passivation. After strong NO passivation, the fast states are passivated to the interface states with lower response frequency in N-MOS and significantly suppressed in P-MOS. It indicates that the nitridation may passivate the defects by shifting them from shallow level to deep level.
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