Abstract
A synthesis of vertical silicon nanowire array through metal-assisted chemical etching of highly doped p-type silicon wafers (100) in a solution of hydrofluoric acid and silver nitrate has been proposed. . The influences of the growth parameters such as solution concentration, etching time have been investigated. In addition, we consider other common parameters like wafer resistivity and temperature, which rely on the silicon nanowires formation. The results indicate that the silicon nanowires retain the single crystalline structure and crystallographic orientation of the starting silicon wafer. Furthermore, They provide excellent antireflection property with a low reflection loss of 3% for incident light within the wavelength range of 200–900 nm. Such nanowire arrays may have potential applications as antireflection surface for silicon solar cells
Highlights
In recent years, One-dimensional nanostructures have attracted much attention because of their interesting structural, electronic and optical properties and because of their unique applications in mesoscopic physics and fabrication of nanoscale devices ( 1,2)
Typical cross section view scanning electron microscope (SEM) images of the SiNWs arrays prepared by metal-assisted wet-chemical etching is shown in Figure1 (a)
The all of process conditions for the fabrication of Si NWs using the metal-assisted wet-chemical etching method have been studied in detail as a f unction of temperature, etching time, etching solution concentration and starting substrate characteristics
Summary
One-dimensional nanostructures have attracted much attention because of their interesting structural, electronic and optical properties and because of their unique applications in mesoscopic physics and fabrication of nanoscale devices ( 1,2). As a top-down approach, metal-assisted wetchemical etching of silicon substrates i s considered as a promising method to achieve precise positioning of aligned SiNWs as well as control of diameter, length, spacing, and density, avoiding high-cost and low-throughput conventional lithographic processes Considering these great features, metal-assisted wetchemical etching method is expected to become the leading technique to produce Si NWs arrays. We study the process parameters, including the time (up to 2 h), temperature (within 25–100 ◦C) , etching solution concentration a nd the nature of the substrate (such as doping type, density and crystallinity).The SiNWs arrays show a low reflectance loss of 3% within the wavelength range of 200–9,00 nm Based on their excellent antireflection property, they may have potential applications as antireflection surface for silicon solar cell applications. Ashour et al / Malaysian Journal of Fundamental & Applied Sciences Vol., No.3 (2012) 141-146
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