Abstract
The near surface structure of low energy (0.5-1.5 keV) argon bombarded Si(100) was characterized using medium energy ion scattering and high resolution X-ray photoemission spectroscopy. The ion induced lattice damage, distribution and redistribution of incorporated argon and silicon carbide formed during the dynamic mixing process are directly and non-destructively measured and depth-profiled in the sub-nanometre scale. The results capture many details of low energy ion interaction with Si in the near surface and address the capability for direct and non-destructive characterization of such interactions in the sub-nanometre scale.
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