Abstract
The ion-beam induced luminescence (IBIL) method has been used to characterize the heterointerface properties between a ZnSe epitaxial layer and GaAs substrate, and to analyze a major constituent of 90 K YBaCuO superconducting ceramics. Prominent sharp-atomic lines from sputtered atoms during 50 keV Ar + ion bombardment can be observed in the spectral range of 200 to 700 nm at room temperature or at 85 K using a highly sensitive photon counting system. The interface width between ZnSe and GaAs is determined to be about 400 Å by detecting Zn I and Ga I atomic lines, which is comparable to the results by SIMS or XPS measurement. The IBIL spectrum observed in superconducting YBaCuO is found to be different from that of nonsuperconducting species. In particular, the ratio of Cu atomic line intensity to that of Ba in superconducting species is larger than that in nonsuperconducting species, and becomes much more pronounced at 85 K.
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