Abstract
The principles of characterization techniques for semiconductor devices based on infrared laser interferometry are reviewed. Transient optical signals due to plasma-and thermo-optical effects are studied by experiment and numerical modeling, providing information on carrier concentration and lattice temperature in the device. The applicability of the techniques is demonstrated on smart power devices, VDMOSFETs, IGBTs and on sub-micron technology MOS- and bipolar transistors.
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