Abstract
CdTe crystals were grown by horizontal seeded physical vapor transport technique in uncoated and boron nitride coated fused silica ampoules with the source materials near the congruent sublimation condition. The grown crystals were characterized by current–voltage measurements, low-temperature photoluminescence spectroscopy, near IR transmission optical microscopy, spark source mass spectroscopy and chemical etching. The measured resistivities of the crystals were in the high-10 8 Ω cm range. The photoluminescence spectra of the crystal grown in the boron nitride coated ampoule showed similar features previously observed in the CdTe crystals doped with group III elements. Although the crystal was contaminated with boron, the boron nitride coating of the growth ampoule has yielded a single crystal with no inclusions or precipitates.
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