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Abstract
Surface patterning by e-beam lithography and scanning electron microscope (SEM) imaging distortions are studied via digital image correlation. The global distortions from the reference pattern, which has been numerically generated, are first quantified from a digital image correlation procedure between the (virtual) reference pattern and the actual SEM image both in secondary and backscattered electron imaging modes. These distortions result from both patterning and imaging techniques. These two contributions can be separated (without resorting to an external caliper) based on the images of the same patterned surface acquired at different orientations. Patterning distortions are much smaller than those due to imaging on wide field images.
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