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Abstract
On the basis of the ac modulation technique a novel method is developed, which permits the extraction of the key parameters of Schottky diodes, i.e., the ideality factor, the barrier height, and the series resistance. These properties can be derived at any forward bias voltage from the current-voltage characteristic and its first and second derivative. Limitations to the method arise mainly from the voltage dependence of the effective barrier height, as can be shown by a model calculation. Applicability and exactness are demonstrated by experimental investigations of Ti/n-Si diodes with high series resistance, Yb/n-Si junctions, and Ti contacts on n-type InP, In0.73Ga0.27As0.64P0.36, and In0.53Ga0.47As.
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