Characterization of scaled MANOS nonvolatile semiconductor memory (NVSM) devices

Gan Wang Gan Wang,Marvin H White,Nathan Eichenlaub,Yanli Zhang Yanli Zhang

doi:10.1109/isdrs.2007.4422527

Characterization of scaled MANOS nonvolatile semiconductor memory (NVSM) devices

Gan Wang Gan Wang, Marvin H White + Show 2 more

https://doi.org/10.1109/isdrs.2007.4422527

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Publication Date: Dec 1, 2007

Affiliation: Lehigh University

#Nonvolatile Semiconductor Memory #Nonvolatile Semiconductor Memory Devices + Show 8 more

Abstract
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Abstract

In this paper, the authors have fabricated MANOS NVSM devices with high-k Al <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> as the blocking oxide, which demonstrate good speed, 10-year retention, and endurance performance for future low voltage operation and improved NVSM array efficiency.

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