Characterization of RuO 2 films prepared by rf reactive magnetron sputtering

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Ruthenium dioxide (RuO 2) films have been prepared by rf reactive magnetron sputtering at different oxygen partial pressures and total sputtering pressures. The films have been characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD) and electrical conductivity. The films prepared at low oxygen partial pressure and total pressure show a strong preferred orientation along the (110) direction. As both pressures increase, the peak intensity decrease. All the films are subject to a compressive stress. As the total pressure is decreased and the oxygen partial pressure is increased, the stress increases. When the total pressure is lower than 6×10 −3 mbar and the oxygen partial pressure is higher than 1×10 −3 mbar, the films peeled off automatically from the substrate because of the high stress. The films prepared at high oxygen partial pressure and high total pressure have a rough surface and those prepared at low pressure show smooth surface. In this paper, these phenomena have been discussed. In addition, the electrical properties of the films are also discussed.