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Abstract
The properties of defects introduced during RF sputter deposition of Ti‐W contacts on p‐Si were investigated using I‐V, deep level transient spectroscopy (DLTS), and electron‐beam‐induced current (EBIC) techniques combined with isochronal and isothermal annealing. It was found that the barrier height decreased from 0.56V before annealing to 0.5V after isochronal annealing. DLTS measurements indicate the presence of several sputter‐induced defect states. Annealing removed some of the defects, but second generation defects were still present after annealing at 500°C, now distributed deeper into the substrate. EBIC results showed that the diffusion length decreased with increasing annealing temperature. DLTS and EBIC results suggest that a hole trap at is a strong recombination center. This hole trap is very likely the same defect as the one identified as the K center .
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