Abstract
The defect levels in junction photodiodes (x = 0.4) were first studied using deep-level transient spectroscopy. Two electron traps, and , and two hole traps, and , were obtained. Characteristic parameters - the minority lifetime of the devices and the dynamic resistance - area product at zero bias - are estimated according to these levels. Results show that these two minority levels may be important in controlling lifetime. We have studied the recombination mechanism of the hole trap further. It has a large activation energy and satisfies the formula . This reflects the fact that its recombination mechanism is multiphonon nonradiative recombination, which is rarely reported in narrow-bandgap materials.
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