Characterization of random telegraph noise in gate induced drain leakage current of n- and p-type metal-oxide-semiconductor field-effect transistors

Abstract

Random telegraph noise in gate induced drain leakage current of nanoscale n- and p-type metal-oxide-semiconductor field-effect transistors (MOSFETs) was observed and analyzed for the first time. Capture and emission probability of carrier was analyzed in terms of gate voltage and temperature. The emission times (τe) in n and pMOSFETs have no dependence on VGS but are strongly dependent on temperature since the τe is decreased more significantly with increasing temperature than the capture time (τc) in n and pMOSFETs. As VGS increases, the τc in n and pMOSFETs decreases.