Abstract
ABSTRACTSputtered titanium films with thicknesses in the range of 300 to 1200Å were processed in a commercial rapid annealing system to form TiSi2 films. The films were first reacted at low temperatures (500-700°C), etched in ammonia/peroxide solution, and then reacted at 850-900°C to simulate a typical self-alignedsilicide (salicide) process. A method to correctfor dynamic temperature nonuniformities and the resulting etch nonuniformities will be discussed. Sheet resistance maps of the resulting films will be presented. In addition, film properties were measured as a function of annealing ambient in particular, the effects of oxygen contamination were studied.
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