Abstract
Polycrystalline SrRuO3 (SRO) thin films were deposited on SiO2/Si substrate by using the DC magnetron sputtering method for application as buffer electrodes in PZT ferroelectric capacitors. The process parameters, such as the substrate temperature, the pre-heating time, the DC power and the oxygen gas ratio, were systematically varied to obtain high-quality SRO thin films. Among the various process conditions, the substrate temperature was a major factor having a significant effect on the electrical resistivity and the microstructure. Regardless of the deposition conditions, the SRO films showed a columnar structure and a highly (121) orientation at substrate temperatures higher than 450 ◦C. The lowest resistivity obtained was about 440 μΩ·cm for the 30-nm-thick SRO film deposited at 550 ◦C. The PZT capacitor with the SRO buffer layer showed a very high remanent polarization value (2Pr ∼ 60 μC/cm) and a small fatigue loss (∼10 %) after 1 × 10 switching cycles.
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