Abstract
A heterojunction comprising a La1.9Sr0.1CuO4 thin film on a 0.5 wt. % Nb doped SrTiO3 single-crystal substrate was fabricated using magnetron sputtering deposition and ion milling etching techniques. Rectification has been observed in the current–voltage characteristics of the heterojunctions from 30 to 300 K. The temperature evolution of the ideality factor implies the important role of barrier inhomogeneity at the junction interface. A systematic study of capacitance as a function of frequency under different bias voltages at room temperature was also carried out. The capacitance can be explained by deep-level defects in the space charge region.
Highlights
Following the treatment of the Nb doped SrTiO3 (NSTO) substrates, LSCO films have been deposited through magnetron sputtering with a base pressure of 2 × 10−7 Torr
We report the synthesis of heterojunctions comprising an epitaxial La1.9Sr0.1CuO4−δ (LSCO) thin film grown on a 0.5 wt. % Nb doped SrTiO3 (NSTO) substrate
The LSCO film was grown by magnetron sputtering, and the LSCO/NSTO heterojunction was patterned by physical ion-milling
Summary
Following the treatment of the NSTO substrates, LSCO films have been deposited through magnetron sputtering with a base pressure of 2 × 10−7 Torr. The LSCO film was grown by magnetron sputtering, and the LSCO/NSTO heterojunction was patterned by physical ion-milling. Out-of-plane I–V measurement of the LSCO/NSTO heterojunction shows good rectifying behavior, similar to a conventional p–n or Schottky junction.
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