Abstract
We have investigated p-n junctions on a silicon device fabricated on a (100) surface using photoemission electron microscopy (PEEM). We show that different doping levels for the p-and n-doped regions in the surface give rise to a contrast in the PEEM images. The contrast is due to the change in the photoemission threshold for different bulk doping levels when the Fermi level is pinned between the valence- and the conduction-band edge at the surface. The intensity profiles change when the Fermi level is pinned at different positions within the band gap. We present a detailed analysis of intensity profiles of p-n junctions in a PEEM image. We show that PEEM is capable of characterizing p-n junctions and surface-states on silicon devices. The images are significantly affected by electron optical deflections of the photoemitted electrons caused by the high lateral electrical field of a biased p-n junction. We are able to identify this as an electron optical effect on the profile shape by simulations of the electron trajectories between the sample and the first aperture of the PEEM.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Applied Physics A: Materials Science & Processing
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
