Abstract
We report photoinduced carrier recombination induced by 13.56 MHz radio frequency argon plasma treatment for samples of silicon substrates coated with thermally grown SiO2 layers. The transmissivity of a 9.35 GHz microwave was measured and analyzed under illumination of 532 nm green light to the top or rear surface. Irradiation of argon plasma at 100 W for 5 min caused substantial carrier recombination. The recombination velocity of the plasma-irradiated surface was estimated to be 6000 cm/s. Investigation of 100 kHz capacitance response characteristics as a function of bias voltage for metal oxide p-type silicon structures revealed that irradiation of argon plasma increased the fixed charge density from 3.2×1011 to 3.0×1012 cm-2. Those changes were restored completely by heat treatment at 300 °C in air for 60 min.
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