Abstract
Patterned oxides buried in bonded silicon-on-insulator (SOI) wafers before thinning have been characterized by near-infrared scattering topography and microscopy combination system. The micron-scaled pinhole in oxide patterned buried in the bonded SOI wafer has been observed by the scattering topography. The edge of the patterned oxide has also been observed by both scattering topography and transmission microscopy. With the combination of scattering topography, transmission and reflection microscopy, this system is effective to evaluate the visibility of the patterned oxide buried in the bonded SOI wafer.
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