Abstract
Abstract Ferroelectric lead zirconate titanate (PZT) thin films are deposited at a low substrate temperature (530–590 °C) by an electron cyclotron resonance (ECR) sputtering method using two targets: a ceramic PZT and a lead metal target. Si wafers are employed as substrates. The piezoelectric constant e31 is 2.1 C m−2 without poling treatment for a PZT film deposited at 550 °C.
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