Abstract
Photoconductive properties of a-Si:H films deposited on Si(100) substrates by reactive sputtering at room temperature were characterized as a function of hydrogen concentration in the films and the film thickness. In 230 nm thick a-Si:H films, the difference between dark- and photoresistance increases with increasing hydrogen concentration within the films. The films deposited with an H 2 flow rate of 2 sccm show a dark-resistance of approximately 1 × 10 6 Ω/□ and a photoresistance of 2 × 10 4 Ω/□. A decrease in the difference between dark- and photoresistance values with increasing film thickness above 230 nm was attributed to the increase of polymeric bonding such as SiH 2 within a-Si:H films. a-Si:H films deposited on Si(100) substrates are considered to be suitable for photoconductivity materials in photoconducting sensor applications.
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