Characterization of β-Phase MgGaO Thin Films Grown by Molecular Beam Epitaxy

Abstract

B-phase MgGaO ternary alloy thin films of different Mg compositions were grown by using oxygen plasma assisted molecule beam epitaxy (MBE). The atomic ratios of Mg and Ga in sample A, B, and C were recorded as 11.15 at.%/88.85 at.%, 23.29 at.%/76.71 at.%, and 36.35 at.%/63.65 at.%, respectively, which were measured by energy-dispersive X-ray (EDX) spectroscopy. The samples were characterized by a scanning electron microscope (SEM), showing that the surface becomes rougher in samples with higher Mg contents. Three typical monoclinic structure diffraction peaks located at 19.12°, 38.50°, and 59.14°, which correspond to the B phases of (-201),(-402), and (-603) were investigated by X-ray diffraction (XRD), and all these diffraction peaks exhibit an obvious blue shift compared with that of reference B-Ga,0.. Raman spectra were investigated by a confocal Raman microscope equipped with a high-resolution laser centered at 532 nm with a power of 60 mW. Four out of ten A_ and four out of five B_ Raman-active optical phonon modes were observed. The reduced peak intensity of A (2)(9) A (10) B (2)- (3), and B 8 indicates that Mg * atoms have replaced the position of Ga * ions in both octahedral and tetrahedral chains. The ultra-wide bandgap absorption and transmittance spectra were measured using a UV-Vis-NIR spectrophotometer. Ultra-wide bandgaps of 4.98, 5.05, 5.20, and 5.30 eV were measured for pure Ga,0x, sample A, B, and C, respectively with all transmittances of light over 80% in the visible spectrum region. Temperature-dependent photoluminescence (PL) spectra were investigated by a 325-nm laser with temperatures ranging from 13 to 300 K, revealing only intermediate level transitions, which decrease with the increase of temperature. A MSM solar-blind ultraviolet photodetector (PD) was fabricated based on MgGaO films with Pt/Au electrodes. Photoresponse has been studied by typical dark and irradiated wavelength dependent I-V curves.