Abstract
Due to the unique structure and small scale of MEMS/NEMS, the inherent residual stresses during the deposition processes can have a profound effect on the functionality and reliability of the fabricated MEMS/NEMS devices. Residual stress often causes device failure due to curling, buckling, or fracture. Typically, the material properties of thin films used in surface micromachining are not controlled during deposition. In this research, plasma enhanced chemical vapour deposition (PECVD) method is explored to produce nearly residual stress free silicon nitride and silicon dioxide thin films at 400°C. Process parameters, such as power, frequency mode, reactants flow rate and ratio, temperature and pressureinfluences the nature and magnitude of stress. The reduced residual stress levels can significantly improve device performance, reliability, and yield as these devices become smaller. Other properties Refractive index, thickness, thickness uniformity, and composition are studied to assess the quality of these films.
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