Characterization of partial dislocations for (3, 3, 4), (3, 3, 3, 3), and (3, 3, 2, 2, 4) stacking faults in 4H-SiC crystals

Abstract

The microstructure of the partial dislocations was characterized with respect to three types of stacking faults found in our previous work on 4H-SiC epitaxial film on p-type substrates. These stacking faults were found to be Shockley-type with five, six, and nine Shockley-type partial dislocations with Burgers vector directions parallel to the basal planes, which are more than previously reported. The correspondence between the number of Shockley partial dislocations, the stacking sequence, and the basal planes in which partial dislocations are introduced was discussed for the number of partial dislocations up to nine with regard to Shockley-type stacking faults with expansion from previous reports.