Abstract
Summary form only given. The authors report CW, room-temperature operation of a novel strained single-quantum-well, implanted-planar-buried-heterostructure graded-index separate-confinement-heterostructure (IPBHGRINSCH) laser in InGaAs-AlGaAs. Using this novel IPBHGRINSCH structure, the authors report the first direct evidence of the effects of the highly parabolic valence subband in strained quantum-well injected lasers as exhibited by an enhanced wavelength shift versus injection current compared to unstrained reference GaAs-AlGaAs devices. The present results, demonstrating band-filling behavior in strained-quantum-well injection lasers, suggest that strained-layer lasers can be used for frequency modulation applications requiring enhanced current sensitivity or for amplitude modulation above threshold with enhanced frequency stability at lower injection levels. >
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