Abstract
For the application of ultraviolet light emitting diodes, self-organized p–n junctions were formed at the boundaries of facets in cubic boron nitride. The optical and electrical characteristics of these junctions were studied using cathodoluminescence (CL) and electron-beam-induced current (EBIC) in a scanning electron microscope. The p and n regions were clearly distinguished by the variation of CL spectra and monochromatic CL images. A broad band with a peak at 4.0 eV (310 nm) was observed in p-region, but not in n-region. Monochromatic CL image at 4.0 eV showed that the Be impurity distribution in p-region was not uniform. Variation of EBIC profiles indicated the inhomogeneity of diffusion length along p-n junction. The inhomogeneous electroluminescence along the p–n junction under the reverse current condition was clarified by the inhomogeneities revealed by EBIC and CL characterizations.
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