Abstract
The lanthanum fluoride thin films has been prepared by means of thermal evaporation method. The XRD analysis shows the formation of polycrystalline hexagonal LaF3. The depth profile X-ray photoelectron spectroscopy (XPS) analysis shows the presence of oxide ions throughout the films. The formation of lanthanum oxyfluoride (LaOF) has been identified. The [O]/[F] ratio has been found to be 0.35 which is higher than the previously reported values of LaF3 film applied for the oxygen sensor.
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