Abstract
The paper reports a first growth of the Al-doped GaSe crystals by modified technology with heat field rotation. These crystals shown from 2 to 3 times lower absorption coefficient at the maximal transparency range to that in crystals grown by conventional Bridgman technology. Possibility of the identification of optimal doping level in grown crystals by analysis of shape of the exciton absorption peak and intensity of the absorption shoulder at the transmission edge was demonstrated. The optimal doping can be attributed to the concentration of Al in the growth charge between 0.02 and 0.05 at.%. The result of the identification is confirmed by frequency conversion experiments: CO2 laser SHG and optical rectification of fs pulses.
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