Abstract
Ohmic contacts on GaSb were achieved using ZnAu multilayers for p-type GaSb and TeAu multilayers for n-type GaSb. Contacts were electrically characterized by their specific resistance, which could be obtained currently as low as 10 −5 Ω cm 2 for p-type GaSb and 10 −6 Ω cm 2 for n-type GaSb. The surface composition was studied by means of secondary ion mass spectrometry, which showed that interface alloying gives the best results.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
