Abstract
Ohmic contacts on GaSb were achieved using ZnAu multilayers for p-type GaSb and TeAu multilayers for n-type GaSb. Contacts were electrically characterized by their specific resistance, which could be obtained currently as low as 10 −5 Ω cm 2 for p-type GaSb and 10 −6 Ω cm 2 for n-type GaSb. The surface composition was studied by means of secondary ion mass spectrometry, which showed that interface alloying gives the best results.
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