Abstract
Luminescence intensity dependence on excitation intensity has been studied at quasi-steady-state conditions in CdS and CdSe crystals at T=294 K and interpreted, with heating of photoelectrons taken into account. The shape of the dependence indicates a reduction of carrier density due to increased effective temperature. A method for estimating the height of the barrier for centers governing the thermally activated nonradiative capture by multiphonon emission is proposed. The barrier heights of 140 and 170 meV in CdS and CdSe, respectively, have been estimated.
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