Abstract

AbstractLaser-induced fluorescence(LIF) spectroscopy has been applied to the detection of excited nitrogen molecules coming out of a plasma source used for p-type doping of ZnSe. With the use of a fluorescence-photon-counting system, the fluorescence of nitrogen molecules in the A3 Σ u+ (v=0) state was observed even in a high vacuum condition ˜ 10−4 Pa. The correlation between LIF intensity of nitrogen molecules in the A3 Σ u+(v=0) state and the net acceptor concentration of nitrogen doped ZnSe epitaxial layers was investigated.

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