Abstract

New techniques to manipulate the electronic properties of few layer 2D materials, unveiling new physical phenomena as well as possibilities for new device applications have brought renewed interest to these systems. Therefore, the quest for reproducible methods for the large scale synthesis, as well as the manipulation, characterization and deeper understanding of these structures is a very active field of research. We here report the production of nitrogen doped bilayer graphene in a fast single step (2.5 minutes), at reduced temperatures (760 °C) using microwave plasma-enhanced chemical vapor deposition (MW-PECVD). Raman spectroscopy confirmed that nitrogen-doped bilayer structures were produced by this method. XPS analysis showed that we achieved control of the concentration of nitrogen dopants incorporated into the final samples. We have performed state of the art parameter-free simulations to investigate the cause of an unexpected splitting of the XPS signal as the concentration of nitrogen defects increased. We show that this splitting is due to the formation of interlayer bonds mediated by nitrogen defects on the layers of the material. The occurrence of these bonds may result in very specific electronic and mechanical properties of the bilayer structures.

Highlights

  • New techniques to manipulate the electronic properties of few layer 2D materials, unveiling new physical phenomena as well as possibilities for new device applications have brought renewed interest to these systems

  • If the observed splitting in the X-ray photoelectron spectroscopy (XPS) peak was associated to new types of defects becoming more frequent in the material as the concentration of nitrogen increases, we would expect similar behavior to occur in the monolayer graphene, but we have found no reports of a similar splitting in the literature for this material

  • We described a MW-plasma-enhanced chemical vapor deposition (PECVD) process that enables the growth of nitrogen-doped bilayer graphene films on Cu foil in a fast and reproducible way, producing films with large area (5 mm × 5 mm) and high crystallinity

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Summary

Introduction

New techniques to manipulate the electronic properties of few layer 2D materials, unveiling new physical phenomena as well as possibilities for new device applications have brought renewed interest to these systems. The substitution of carbon by nitrogen disrupts the ideal sp[2] hybridization of graphene’s lattice, locally inducing significant changes to its electronic properties, separating the conduction band from the valence band even at modest concentrations of 2%11,16 This possibility of tunning graphene’s electronic properities could lead to potential applications in electronic devices, from electrochemical biosensors to spintronics[17,18]. Www.nature.com/scientificreports composed of three layers of atomic sheets alternating 2D Boron Nitride sheets with graphene monolayer[22] In all of these cases, the appearance of a new periodicity in the rotated crystalline systems - called a moiré superlattice - results in new electronic properties of the systems. The realization that the properties of these systems can be so dramatically altered by twisting the angle of stacking these monolayers indicates that these new possibilities stretch even further[23]

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