Abstract
Silicon photomultipliers (SiPMs) have low radioactivity, compact geometry, low operation voltage, and reasonable photo-detection efficiency for vacuum ultraviolet light (VUV). Therefore it has the potential to replace photomultiplier tubes (PMTs) for future dark matter experiments with liquid xenon (LXe). However, SiPMs have nearly two orders of magnitude higher dark count rate (DCR) compared to that of PMTs at the LXe temperature (∼165 K). This type of high DCR mainly originates from the carriers that are generated by the band-to-band tunneling effect.To suppress the tunneling effect, Hamamatsu Photonics K.K. have developed a new SiPM with lowered electric field strength. We have characterized its performance in a temperature range of 153 K to 298 K. We demonstrated that the newly developed SiPMs have 6–60 times lower DCR at low temperatures than that of the conventional SiPMs.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
