Abstract
The thin tunneling barrier in a Nb/AlO/sub x/-Al/Nb Josephson junction was characterized by anodization spectroscopy. Nb/AlO/sub x/ and Al/Nb interfaces made by varying certain process parameters were examined. The interface quality is greatly affected by film thickness, layer sequence, annealing, and existence of a thin oxide. It is concluded that anodization spectroscopy is a useful technique to diagnose the tunneling barrier in the Nb/AlO/sub x/-Al/Nb Josephson junctions during fabrication processes. >
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