Characterization of nanocluster formation in Cu-implanted silica: Influence of the annealing atmosphere and the ion fluence

Abstract

High-purity silica plates were implanted with 2 MeV Cu + ions at various ion fluences: 0.7 × 10 16, 3 × 10 16 and 6 × 10 16 ions/cm 2. After implantation, thermal treatments were performed at 400 °C and 900 °C in either an oxidizing (air) or a reducing (50% H 2 + 50% N 2) atmosphere for 1 h. All the samples were studied by electron paramagnetic resonance, X-ray photoelectron spectroscopy, high-resolution transmission electron microscopy (HRTEM), Rutherford backscattering spectrometry and optical absorption. The advantages of the reducing atmosphere (RA) over the oxidizing atmosphere (OA) are clearly observed. When annealed in a RA, the surface plasmon resonance is more intense and a narrower size distribution of the Cu nanoparticles is obtained. The existence of CuO nanoparticles was confirmed by HRTEM, and while both annealing atmospheres favor the formation of CuO nanoparticles, this process is strengthened when the sample is annealed in an OA.