Abstract
Amorphous chalcogenide films of the composition Ge 20Bi x Se 80− x (in atomic per cent) have been prepared by the flash evaporation technique. The amorphous films were obtained up to x = 17 at.%, in contrast to x = 13 at.% in the melt- quenched bulk glasses. The d.c. conductivity of these films exhibited a composition dependence similar to that of the bulk glasses and was very slightly affected by the annealing. However, the sign of the thermoelectric power of the films was negative (n type) above x = 10 at.% and its absolute values were increased by annealing, indicating structural relaxation in these films during the annealing process.
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