Abstract
CuGa xIn 1−xSe 2 is a potential absorber material for the fabrication of heterojunction solar cells. CuGa xIn 1−x Se 2 films (0.5−3.0 μm), grown at T s=598−648 K on Corning 7059 glass substrates using the flash evaporation technique, were p-type, nearly stoichiometric and polycrystalline with a chalcopyrite structure. Polycrystalline thin film n-CdS/p-CuGa xIn 1−x Se 2 heterojunctions were fabricated with a back-wall configuration and the junction characteristics were evaluated in terms of current density-voltage, capacitance-voltage and spectral response measurements. The electrical conversion efficiency obtained for cells with an active area of 1 cm 2 under a solar input of 85 mW cm −2 was 7.6%, 6.7% and 6.5% respectively for CuGa xIn 1−x Se 2 cells with x=0.25, 0.50 and 0.75.
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