Characterization of multilayer structures with titanium nitride and titanium silicide

Abstract

Three different contact schemes, namely TiSi, TiN 0.7Si and TiN/TiSi, were prepared by sputter deposition. The reactions of Ti, TiN/Ti and TiN 0.7 films with silicon wafers (100) during vacuum annealing were studied by X-ray diffraction, Auger sputter depth profiling and cross-sectional transmission electron microscopy. The sheet resistance variation of the films was measured for a range of annealing temperatures from 773 to 1123 K. A CMOS test chip was fabricated and contact resistance and leakage current were measured in small n +p diodes.