Abstract
Tungsten (W) incorporated diamond film was homoepitaxially grown on a mosaic diamond wafer by hot-filament chemical vapor deposition. The crystallinity of the W incorporated epilayer and the original mosaic diamond wafer was characterized by using high-resolution electron backscatter diffraction (HR-EBSD). From kernel average misorientation maps (KAM) derived from HR-EBSD measurements, it was found that the numerical value of KAM and the width of coalescence boundary region (CBR) of W incorporated epilayers were much smaller than those of original mosaic diamond wafers and not only in the CBR but also in the bulk area, the crystalline quality of the W incorporated epilayer is better than that of the original mosaic diamond wafers. It is suggested that the primal role for the W incorporation is strain reduction near threading dislocations during growth.
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