Abstract
MIM diodes based on Nb/Nb2O5 are analyzed. The tunneling probability calculation is based on the transfer matrix method and the non equilibrium green's function. Contour plots are presented showing the effect of the oxide thickness and the work function difference between the left metal electrode, Nb and the right metal electrode on the diode resistance, responsivity, and non linearity. Also, the total rectenna efficiency is analyzed for various MIM structures.
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