Abstract
Effusion measurements of implanted helium are used for characterization of microstructure in amorphous and microcrystalline silicon and related alloy films. The results support the usefulness of the method and suggest the presence of a strongly varying void-related microstructure which depends, e.g., on the deposition method, the substrate temperature, the annealing state, doping and alloying. (© 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Paper version not known
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
