Abstract
We have studied by means of Raman scattering the damage induced by the implantation of Mg + ions into (1 0 0) semi-insulating Fe-doped InP wafers, at energies of 80 keV and fluences ranging from 10 12 to 5×10 14 cm −2. The loss of crystallinity induced by the implantation process results in the intensity decrease of the first and second-order optical Raman peaks and the emergence of disorder-activated modes. The Raman spectra of the samples implanted at doses higher than 10 14 cm −2 show that the material is completely amorphized. The intensity of the second-order optical Raman peaks allows us to evaluate the degree of lattice disorder in samples implanted with different fluences.
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