Abstract
Defects at Schottky contacts in GaAs devices were probed by a monoenergetic positron beam. Doppler broadening profiles of the annihilation radiation were measured as a function of incident positron energy for a Ti/GaAs specimen. From an analysis of the relationship between the S parameter and incident positron energy, vacancy-type defects were found to be present at the Ti/GaAs interface. Annihilation characteristics of positrons in an AuGeNi/GaAs specimen were also studied. In the alloyed layer, the diffusion length of positrons was decreased by scattering and/or trapping of positrons by precipitates and solute atoms, while no response indicating the presence of vacancy-type defects was observed in Doppler broadening profiles.
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