Abstract
We have examined several metal films currently used in IC manufacturing and reported the results of reflectivity as a function of different processing parameters. The objective when characterizing a film to be used as an anti-reflective coating (ARC) is to locate and optimize the process window to achieve the minimum reflectance at the operating wavelength of a stepper. Reflectivity measurements as a function of thickness and process conditions, across broadband wavelengths, are presented. These results show the variation in minimum reflectance as a function of these variables. Various thicknesses of coherent titanium nitride (TiN) and titanium tungsten (TiW) films have been studied to understand the application of these films to interconnect metallization schemes as anti-reflective coatings. Additionally, a series of aluminum (Al) wafers are created to show the variation in measured absolute reflectivity as a function of process parameters. The aluminum deposition temperature was varied from 100 degree(s)C to 500 degree(s)C.
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