Abstract
Epitaxial anatase and rutile TiO 2 films doped with Cr, Nb, Ta and W are successfully prepared by pulsed laser deposition. Anatase TiO 2(0 0 1) films are grown on SrTiO 3(0 0 1) and LaAlO 3(0 0 1) substrates. Rutile TiO 2(1 0 0) films are also obtained on α-Al 2O 3(0 0 0 1) substrates. The typical temperature of substrates during the deposition is 500 °C and the pressure of O 2 gas is 4.7 Pa. The crystal quality of films, crystallographic relationships, and the concentration of doped metals were assessed by X-ray diffraction and Rutherford backscattering spectroscopy with channeling. The high quality metal-doped epitaxial TiO 2 films are obtainable through the post-deposition annealing at 800 °C in air for 5 h. The concentration of doped metals is in the range from 0.2 to 1.5 at.%. RBS/channeling analysis reveals that doped Cr, Nb, Ta and W atoms are incorporated into the substitutional lattice sites of the anatase and rutile TiO 2.
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